Table of Contents Author Guidelines Submit a Manuscript
ElectroComponent Science and Technology
Volume 5 (1979), Issue 4, Pages 215-218
http://dx.doi.org/10.1155/APEC.5.215

Improvement of Adhesion, Line Definition, Contact Resistance and Semiconductor Properties by Sputter-Etching

Institut für Netzwerk- und Systemtheorie, Universität Stuttgart, Seidenstr. 36, Stuttgart D- 7000, Germany

Received 12 June 1978

Copyright © 1979 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In an RF-sputtering unit, with suspended substrates mounted in lieu of a target, sputter-etching of the substrates and consecutive vapor deposition of Au is performed in order to achieve good adhesion of the Au-film without an adhesion layer. The method has been applied for surface-acoustic-wave filters on piezo ceramics and for noise measurements in Au-films on sapphire. The sputter-cleaning as described also reduces the disturbing contact resistance between the conductive Cr-Au-layers and the previously sputtered Ta-film.

Considerable progress has also been made in the manufacture of thin-film transistors by photolithography, chemical etching, and sputter-etching instead of using evaporation masks.