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ElectroComponent Science and Technology
Volume 9 (1981), Issue 1, Pages 59-65

Processing Considerations of Thick Film Devices With Multilayered Resistors

1Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama, Japan
2Takasaki Works, Hitachi, Ltd., Takasaki, Japan

Copyright © 1981 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The results of a study into the fabrication of thick film multilayer devices which include resistors on and under the thick film dielectric layers are presented. Although the resistive values of the resistors under the dielectric change in the succeeding firing processes are influenced by the geometry of the resistors, the ratio of the resistivity change in resistors fabricated with the same sheet resistivity pastes and the same geometry is almost the same. The TCR of the resistors under dielectric layers is influenced mainly by the multi-firing processes. The resistive values and TCR of the resistors on dielectric layers are relatively uninfluenced by the dielectric. The stability of these resistors including trimmed ones under long-term thermal storage at 150℃ is compared with that of resistors on alumina substrates.