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ElectroComponent Science and Technology
Volume 9, Issue 3, Pages 171-178

Defect Density and Electrical Properties of Vacuum Evaporated Copper Films From Annealing Studies of Electrical Resistance

Department of Physics, Madras University Autonomous Post-Graduate Centre, Coimbatore 641 041, India

Received 20 February 1981; Accepted 10 September 1981

Copyright © 1982 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Copper films (210 – 1650 Å) were deposited onto glass microslides by vacuum evaporation. The films were subjected to heat treatment at a constant rate and the variation of electrical resistance with temperature was measured. The defect density and activation energy were calculated for different thicknesses from the knowledge of the change in electrical resistance with temperature and time. The defect density, F0 (E)max, varies from 17.2 to 6.05 μΩcm eV−1 in the thickness range 210 – 1650 Å whereas no appreciable variation in the activation energy is observed.

Thickness dependence of resistivity and temperature coefficient of resistivity (TCR) were studied in the above thickness range and the bulk resistivity and TCR were found to be 1.75 μΩcm and 5.5 × 10−3 K−1 respectively. Assuming the scattering coefficient to be zero, the mean free path of conduction electrons was estimated. From the knowledge of the bulk resistivity and mean free path, the Fermi surface area and the effective free electron density per atom were evaluated as 21.86 × 1016 cm−2 and 0.92 respectively.