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ElectroComponent Science and Technology
Volume 11 (1984), Issue 2, Pages 123-136
http://dx.doi.org/10.1155/APEC.11.123

Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films

Department of Physics, University of South Florida, Tampa 33620, Florida, USA

Received 14 July 1982; Accepted 10 March 1983

Copyright © 1984 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of resistivity (TCR) of these films has been measured for different particle size and concentration (weight percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameter α and hopping parameter β were determined. These results suggest that hopping is important for the low concentration films. For films with positive TCR only parameter α could be determined. The parameter α increased but the parameter β decreased with temperature for the present films.