Abstract
Schottky-barrier diodes have been fabricated using a thick-film technique. A change in V–I characteristic with firing temperature has been observed. This technique is compatible with hybrid circuit technology.
Short Communication | Open Access
Fabrication of Schottky-Barrier Diodes Using a Thick Film Technique
Received09 Aug 1983
Accepted09 Aug 1983
Copyright
Copyright © 1984 Hindawi Publishing Corporation. This is an open access article distributed under the
Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.