G. Beensh-Marchwicka, L. Król-Stępniewska, A. Misiuk, "High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering", Active and Passive Electronic Components, vol. 12, Article ID 049720, 10 pages, 1987. https://doi.org/10.1155/1987/49720
High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.
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