Active and Passive Electronic Components

Active and Passive Electronic Components / 1987 / Article

Open Access

Volume 12 |Article ID 049720 | https://doi.org/10.1155/1987/49720

G. Beensh-Marchwicka, L. Król-Stępniewska, A. Misiuk, "High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering", Active and Passive Electronic Components, vol. 12, Article ID 049720, 10 pages, 1987. https://doi.org/10.1155/1987/49720

High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering

Abstract

Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.

Copyright © 1987 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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