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Active and Passive Electronic Components
Volume 13 (1988), Issue 1, Pages 55-65
http://dx.doi.org/10.1155/1988/19619

A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region

Department of Electrical Engineering, Indian Institute of Technology, Hauz Khas, New Delhi 11O16, India

Received 22 March 1986; Accepted 25 July 1986

Copyright © 1988 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well established in literature, an entirely new RGC line model of MOSFET is presented. The element values of the line are determined by equivalence to a general distributed transmission line and subsequently the model is lumped into a single section in two possible Π and T representations. The postulated model considerably simplifies the study of the properties and behavior of MOSFET structures and can be suitably utilized in analysis and Computer Aided Design.