Transparent and conductive films of SrTiO3 , ITO, and Tl2O3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiOx/Tl2O3 cells. On the other hand for Si/SiOx/SrTiO3(ITO) the photoconversion efficiency is lower than 1% because of the too large thickness of the SiOx interfacial layer.