Realization of Solar Cells Based on Silicon/Oxide Junctions

Campet, G.; Sun, Z. W.; Keou, P.

doi:https://doi.org/10.1155/1990/31452

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Volume 14 | Article ID 031452 | https://doi.org/10.1155/1990/31452

Realization of Solar Cells Based on Silicon/Oxide Junctions

G. Campet,¹Z. W. Sun,¹and P. Keou¹

Abstract

Transparent and conductive films of SrTiO₃ , ITO, and Tl₂O₃ have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiO_x/Tl₂O₃ cells. On the other hand for Si/SiO_x/SrTiO₃(ITO) the photoconversion efficiency is lower than 1% because of the too large thickness of the SiO_x interfacial layer.

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Copyright © 1990 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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