Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films
Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

Campet, G.; Geoffroy, C.; Wen, S. J.; Portier, J.; Keou, P.; Salardenne, J.; Sun, Z. W.

doi:https://doi.org/10.1155/1991/47924

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Volume 14 | Article ID 047924 | https://doi.org/10.1155/1991/47924

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

G. Campet,¹C. Geoffroy,¹S. J. Wen,¹J. Portier,¹P. Keou,²J. Salardenne,²and Z. W. Sun³

Received10 Sept 1990

Accepted06 Nov 1990

Abstract

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.

Copyright

Copyright © 1991 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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