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Volume 14 (1991), Issue 3, Pages 111-118

Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets

1Laboratoire de Chimie du Solide du CNRS, 351 cours de la Libération, Talence, 33405 , France
2Laboratoire d’étude des Matériaux pour la Microélectronique, Université de Bordeaux I, Talence, 33405, France

Received 10 July 1990; Accepted 9 August 1990

Copyright © 1991 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2–SnF2 mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2 slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.