Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films
(ITO: Ge) Obtained at Low Deposition Temperature

Wen, S. J.; Campet, G.; Manaud, J. P.

doi:https://doi.org/10.1155/1993/13729

Active and Passive Electronic Components

On this page

Abstract Copyright Related Articles

Open Access

Volume 15 | Article ID 013729 | https://doi.org/10.1155/1993/13729

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

S. J. Wen,¹G. Campet,¹and J. P. Manaud¹

Received14 Jun 1992

Accepted06 Aug 1992

Abstract

Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out.

Copyright

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

PDF Download Citation Order printed copies

Views

340

Downloads

736

Citations