Active and Passive Electronic Components

Active and Passive Electronic Components / 1993 / Article

Open Access

Volume 15 |Article ID 017302 | https://doi.org/10.1155/1993/17302

S. J. Wen, G. Campet, "The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics", Active and Passive Electronic Components, vol. 15, Article ID 017302, 9 pages, 1993. https://doi.org/10.1155/1993/17302

The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics

Received14 Jun 1992
Accepted06 Aug 1992

Abstract

The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3 (IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect”) and of Ti, Zr and Ge dopings (so called the “electronic effect”) of IO and ITO ceramics. Indeed, Cu doping in IO and ITO enhances the ceramic density and thereby the conductivity due to an increase in the carrier mobility (grain boundary effect); the absorbance in the visible region is then lowered. Most interestingly for Ti-, Zr-, and Ge-doped samples, the increase of conductivity associated with an enlargement of the electron-mobility along with a decrease of the absorbance in the visible, account for the weak interactions occuring between the conduction-band electrons and the ionized donor centers.

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views105
Downloads387
Citations