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Active and Passive Electronic Components
Volume 15, Issue 2, Pages 63-66

Plasma-Optical Effect in GaAs PIN Photodiodes

1Polytechnic University of Madrid, Spain
2Telecommunication Engineer (Senior), Scientific Research Council, Madrid, Spain

Received 25 April 1992; Accepted 11 June 1992

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper is devoted to the analysis of the Plasma-Optical Effect in GaAs PIN photodiodes operating at the infrared range. An approximated expression for the variation of the refractive index in the intrinsic zone of a AsGa PIN photodiode is obtained. This variation is induced by the charge of the device. The approach developed by us is in a good agreement with experimental works. Moreover, an application concerning high-frequency ICs is outlined.