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Active and Passive Electronic Components
Volume 17, Issue 3, Pages 167-175

Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors

Dipartimento di Ingegneria Elettrica, Università di Palermo, Laboratorio di Elettronica delle Microonde, Viale delle Scienze, Palermo 90128, Italy

Received 23 April 1994; Accepted 23 May 1994

Copyright © 1994 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an original automatic noise figure measuring system only. Measurements have been performed over the 1–4 GHz frequency range and at different bias conditions. The extracted model refers to the performance of the chip device since the package and bond parasitics have been accurately de-embedded by proper calibration techniques.