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Active and Passive Electronic Components
Volume 19 (1996), Issue 1, Pages 59-71

New High-Speed a-Si/c-Si- and a-SiC/c-Si-Based Switches

Laboratory of Electrical and Electronic Materials Technology, Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi 67100, Greece

Received 3 July 1995; Accepted 1 September 1995

Copyright © 1996 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a- SiC/c-Si(p)/c-Si(n+)/Al optically controlled switches are presented in this paper. These switches exhibit the lowest ever reported values of rise and fall times, for this kind of switches, of about 3ns. They also exhibit a temperature and light reversibly controlled forward breakover voltage (VBF), together with high values of light triggering sensitivity.