A Mathematical Formulation for
Diamagnetism in Tetrahedrally Bonded
Semiconductors

Grado-Caffaro, M. A.; Grado-Caffaro, M.

doi:https://doi.org/10.1155/1997/58249

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Volume 19 | Article ID 058249 | https://doi.org/10.1155/1997/58249

A Mathematical Formulation for Diamagnetism in Tetrahedrally Bonded Semiconductors

M. A. Grado-Caffaro¹and M. Grado-Caffaro¹

Received03 Feb 1996

Accepted29 Mar 1996

Abstract

An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution in tetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. In addition, a comparison with the amorphous case is outlined.

Copyright

Copyright © 1997 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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