Correlations Between the
Thermoelectric Power and Hall Effect
of SN- or GE-Doped IN<sub>2</sub>O<sub>3</sub> Polycrystalline
Ceramics

Marcel, C.; Salardenne, J.; Huang, S. Y.; Campet, G.; Portier, J.

doi:https://doi.org/10.1155/1997/89056

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Volume 19 | Article ID 089056 | https://doi.org/10.1155/1997/89056

Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN₂O₃ Polycrystalline Ceramics

C. Marcel,¹J. Salardenne,¹S. Y. Huang,²G. Campet,²and J. Portier²

Received03 Jan 1996

Accepted29 Mar 1996

Abstract

The thermoelectric power and Hall effect of Sn-or Ge-doped In₂O₃ ceramics are investigated based on a comparative study. The metal-type conductivity in both the samples occurs when the carrier concentration exceeds ~10¹⁹ cm^-3. The carrier mobility is found to be higher for Ge-doped samples. The relation between the <<Lewis acid strength>> of the dopant element and its scattering cross section is also presented.

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Copyright © 1997 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Active and Passive Electronic Components

Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics

Abstract

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Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN₂O₃ Polycrystalline Ceramics