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Active and Passive Electronic Components
Volume 19, Issue 4, Pages 217-223
http://dx.doi.org/10.1155/1997/89056

Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics

1Laboratoire d'Etudes pour la Microélectronique, Université de Bordeaux I, 351 Cours de la Libération, 33405 Talence cédex, France
2Laboratoire de Chimie du Solide du CNRS, Université de Bordeaux I, 351 Cours de la Libération, 33405 Talence cédex, France

Received 3 January 1996; Accepted 29 March 1996

Copyright © 1997 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

C. Marcel, J. Salardenne, S. Y. Huang, G. Campet, and J. Portier, “Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics,” Active and Passive Electronic Components, vol. 19, no. 4, pp. 217-223, 1997. https://doi.org/10.1155/1997/89056.