Active and Passive Electronic Components

Active and Passive Electronic Components / 1998 / Article

Open Access

Volume 21 |Article ID 038280 | https://doi.org/10.1155/1998/38280

M. N. Doja, Moinuddin, Umesh Kumar, "Four Level Simulation of MOSFET", Active and Passive Electronic Components, vol. 21, Article ID 038280, 27 pages, 1998. https://doi.org/10.1155/1998/38280

Four Level Simulation of MOSFET

Received06 Jan 1998
Accepted15 Apr 1998

Abstract

In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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