M. N. Doja, Moinuddin, Umesh Kumar, "Four Level Simulation of MOSFET", Active and Passive Electronic Components, vol. 21, Article ID 038280, 27 pages, 1998. https://doi.org/10.1155/1998/38280
Four Level Simulation of MOSFET
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.
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