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Active and Passive Electronic Components
Volume 21 (1998), Issue 1, Pages 57-60
http://dx.doi.org/10.1155/1998/45270

Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers

Scientific Consultants, C/Zulio Palacios, 11, Madrid 9-°B 28029, Spain

Received 8 November 1997; Accepted 23 January 1998

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.