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Active and Passive Electronic Components
Volume 21 (1998), Issue 2, Pages 73-78
http://dx.doi.org/10.1155/1998/48934

N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy

Department of Electrical Engineering, Far-East Junior College of Technology and Commerce, Tainan 744, Taiwan

Received 17 June 1996

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

H. C. Chen, “N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy,” Active and Passive Electronic Components, vol. 21, no. 2, pp. 73-78, 1998. doi:10.1155/1998/48934