N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of
potential barrier lowering resulted from the forward biased pn junction is demonstrated in a
AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a
high voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device is
operated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively.
A lasing threshold current density, front slope efficiency, and external differential
quantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%,
respectively. The peak emission wavelength is centered at about 980nm.
