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Active and Passive Electronic Components
Volume 21, Issue 3, Pages 189-198

Analysis of Hot-Carrier Degradation in Small and Large W/Ln-Channel Transistors

1Département de Génie Electrique, Universuté My Ismaïl-F.S.T., B.P. 509, Errachidia, Morocco
2Laboratoire de Caractérisation des Composants à Semiconducteurs, Université Chouaïb Doukkali, B.P. 20, El Jadida, Morocco

Received 5 February 1998; Accepted 15 April 1998

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of the hot-carrier stressing and of the layer dimensions. A large increases of the ideality factor, of the reverse recombination current, and of the series resistance are shown to be more significant for small values of L and W. It is demonstrated that the degradation of parameters is mainly caused by the generation of interface traps.