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Active and Passive Electronic Components
Volume 21 (1998), Issue 1, Pages 61-71
http://dx.doi.org/10.1155/1998/91648

Surface Recombination Via Interface Defects in Field Effect Transistors

1Département de Génie Electrique, Université My lsmaï l-F.S.T., 509 Boutalamine, Errachidia, Morocco
2Laboratoire de Caractérisation des Composants à Semiconducteur, Université Chouaïb, El Jadida, Morocco
3Centre d’Etudes Fondamentales, Université de Perpignan, Perpignan Cedex 66860, France
4Centre Lorrain d’Optique et Electronique des Solides, Supélec, Metz Cedex 3 57078, France

Received 4 February 1997; Accepted 13 March 1997

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions. A model is shown to be powerful to describe the effect of energy level of bulk recombination centers on the values of reverse recombination current.