Abstract
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
(NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The
negative differential resistance (NDR) resulted from the observation of the hot electron real
space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier
mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency
operation. For DC performance, the largest peak-to-valley current ratio of the device is about
5 at room temperature. For AC performance, S-parameter measurements of high frequency
and microwave characteristics indicate a projected maximum frequency of oscillation of