Abstract
In recent years, semiconductor manufacturers have been able to steadily reduce the physical area required by devices, thus allowing an increasing number of circuit functions on a single chip. Smaller semiconductor devices require more detailed and accurate analysis because minor errors can degrade their performance substantially.A new, completely numerical three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size effects the surface potential and threshold voltage. Classical theory does not predict these effects. Although the model currently converges slowly, it can still be useful in analysing new small geometry devices.