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Active and Passive Electronic Components
Volume 22, Issue 1, Pages 1-15

Three-Dimensional Modelling and Simulation Theory of Field Effect Devices

1Department of Electrical Engineering, Jamiamillia Islamia, India
2IIT Delhi, India
3C-46 Eastend Apartments, Mayur Vihar Phase 1 Ext., Delhi 110096, India

Received 30 October 1998; Accepted 14 December 1998

Copyright © 1999 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In recent years, semiconductor manufacturers have been able to steadily reduce the physical area required by devices, thus allowing an increasing number of circuit functions on a single chip. Smaller semiconductor devices require more detailed and accurate analysis because minor errors can degrade their performance substantially.

A new, completely numerical three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size effects the surface potential and threshold voltage. Classical theory does not predict these effects. Although the model currently converges slowly, it can still be useful in analysing new small geometry devices.