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Active and Passive Electronic Components
Volume 22 (2000), Issue 3, Pages 157-163

A New Method for the Extraction of Diode Parameters Using a Single Exponential Model

1Laboratoire de Physique des Semiconducteurs et Energétique, Faculté des Sciences, Université Libanaise, Fanar. B.P. 90656 Jdeidet, Liban, France
2Centre d'Etudes Fondamentales, Université de Perpignan, Avenue de Villeneuve, Perpignan F-66860, France

Received 23 April 1999; Accepted 20 July 1999

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic. A specific case- the ∆V graph reducing to a straight line–is identified and the knowledge of the slope and of the intercept with the ordinate axis leads to the determination of the junction parameters. The method is applied to the characterization of the emitter-base junction of transistors and the results are discussed.