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Active and Passive Electronic Components
Volume 23, Issue 1, Pages 37-51

Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH

Laboratoire de Chronométrie, Electronique et Piézoélectricité, Ecole Nationale Supérieure de Mécanique et des Microtechniques, 26 Chemin de l'Epitaphe, Besancon Cedex 25030, France

Received 12 April 2000; Accepted 25 April 2000

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.