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Active and Passive Electronic Components
Volume 24, Issue 1, Pages 23-29
http://dx.doi.org/10.1155/2001/34065

A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

Laboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, Morocco

Received 19 February 2001; Accepted 19 March 2001

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. El Abbassi, Y. Amhouche, K. Raïs, and R. Rmaily, “A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation,” Active and Passive Electronic Components, vol. 24, no. 1, pp. 23-29, 2001. https://doi.org/10.1155/2001/34065.