Active and Passive Electronic Components

Active and Passive Electronic Components / 2001 / Article

Open Access

Volume 24 |Article ID 065128 |

Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily, "Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S", Active and Passive Electronic Components, vol. 24, Article ID 065128, 9 pages, 2001.

Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S

Received01 Apr 2001
Accepted15 May 2001


In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7107 when L decrease from 2 to 0.1 μm, this behaviour found expression in a fast increase of the substrate current maximum Isubmax. Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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