Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily, "Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S", Active and Passive Electronic Components, vol. 24, Article ID 065128, 9 pages, 2001. https://doi.org/10.1155/2001/65128
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, when L decrease from 2 to 0.1 μm, this behaviour found expression in a fast increase of the substrate current maximum . Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.
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