Active and Passive Electronic Components

Active and Passive Electronic Components / 2002 / Article

Open Access

Volume 25 |Article ID 259762 |

K. F. Yarn, "Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide", Active and Passive Electronic Components, vol. 25, Article ID 259762, 5 pages, 2002.

Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide

Received17 Dec 2001
Revised21 Mar 2002


First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface and p-n+ junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to 105 has been obtained.

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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