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Active and Passive Electronic Components
Volume 25, Issue 3, Pages 211-214

A Complication of Negative Resistance Circuits Generated by Two Novel Algorithms

EE Department, IIT Delhi New Delhi-110016, India

Received 18 June 2001; Revised 13 August 2001

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


There are two algorithms to generate a negative-resistance device which exhibits either a type-N shaped V-1 characteristic similar to a tunnel diode, or a type-S shaped V-1 characteristic similar to a four layered pnpn diode. We present here a selection of these circuits using bipolar, JFET or MOSFET or their combinations.