Active and Passive Electronic Components

Active and Passive Electronic Components / 2002 / Article

Open Access

Volume 25 |Article ID 728125 | https://doi.org/10.1080/08827510213497

K. F. Yarn, "Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD", Active and Passive Electronic Components, vol. 25, Article ID 728125, 4 pages, 2002. https://doi.org/10.1080/08827510213497

Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

Received17 Nov 2001
Revised21 Mar 2002

Abstract

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2 . The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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