K. F. Yarn, "Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD", Active and Passive Electronic Components, vol. 25, Article ID 728125, 4 pages, 2002. https://doi.org/10.1080/08827510213497
Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of were achieved at room temperature. In addition, the maximum available power is estimated up to . The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.
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