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Active and Passive Electronic Components
Volume 25 (2002), Issue 2, Pages 161-167

Low Frequency Noise of Tantalum Capacitors

1Czech Noise Research Laboratory, Brno University of Technology, Technicka 8, Brno 616 00, Czech Republic
2Material Research Centre, Meisei University, Hino, Tokyo, Japan
3Department of Electronics, Yamanashi University, Kofu, Japan

Received 1 December 2001

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model of TaTa2O5MnO2 MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperature MnO2Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.