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Active and Passive Electronic Components
Volume 26 (2003), Issue 4, Pages 197-204

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Laboratoire de Physique des Matériaux et de Microélectronique, Université Hassan II, Faculté des Sciences Aïn Chok, Km8, Route d'El Jadida, Maârif, Casablanca BP 5366, Morocco

Received 30 May 2002; Revised 3 July 2002

Copyright © 2003 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modeling of the drain current in relation to defects due to the hot-carrier injection allows us to investigate the I–V characteristics and the transconductance of devices. Consequently, we can know the amount of the device degradation caused by these defects in order to find technological solutions to optimize reliability.