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Active and Passive Electronic Components
Volume 26, Issue 4, Pages 197-204

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Laboratoire de Physique des Matériaux et de Microélectronique, Université Hassan II, Faculté des Sciences Aïn Chok, Km8, Route d'El Jadida, Maârif, Casablanca BP 5366, Morocco

Received 30 May 2002; Revised 3 July 2002

Copyright © 2003 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • Fayçal Djeffal, Toufik Bentrcia, and Toufik Bendib, “An analytical drain current model for undoped GSDG MOSFETs including interfacial hot-carrier effects,” Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 3, pp. 907–910, 2011. View at Publisher · View at Google Scholar