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Active and Passive Electronic Components
Volume 26 (2003), Issue 4, Pages 197-204
http://dx.doi.org/10.1080/08827510310001624363

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Laboratoire de Physique des Matériaux et de Microélectronique, Université Hassan II, Faculté des Sciences Aïn Chok, Km8, Route d'El Jadida, Maârif, Casablanca BP 5366, Morocco

Received 30 May 2002; Revised 3 July 2002

Copyright © 2003 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

R. Marrakh and A. Bouhdada, “Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection,” Active and Passive Electronic Components, vol. 26, no. 4, pp. 197-204, 2003. doi:10.1080/08827510310001624363