Active and Passive Electronic Components

Active and Passive Electronic Components / 2003 / Article

Open Access

Volume 26 |Article ID 320237 | https://doi.org/10.1080/0882751031000116124

Subhi K. Salih, Hikmat S. Hilal, Iyad A. Sa'deddin, Elisabeth Sellier, Guy Campet, "Modification of n-Si Characteristics by Annealing and Cooling at Different Rates", Active and Passive Electronic Components, vol. 26, Article ID 320237, 18 pages, 2003. https://doi.org/10.1080/0882751031000116124

Modification of n-Si Characteristics by Annealing and Cooling at Different Rates

Received30 Dec 2002
Revised21 Mar 2003

Abstract

The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.

Copyright © 2003 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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