Abstract
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also employ the value-determined model to simulate the microwave characteristics of RST and the theoretical and experimental results are compared. The
influence of variables of RF performance is analyzed and theoretical results show that the cut-off frequency