S. Dib, C. Salame, N. Toufik, A. Khoury, F. Pélanchon, P. Mialhe, "Junction Parameter Extraction for Electronic Device Characterization", Active and Passive Electronic Components, vol. 27, Article ID 826353, 7 pages, 2004. https://doi.org/10.1080/1042015031000073805
Junction Parameter Extraction for Electronic Device Characterization
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.
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