Active and Passive Electronic Components

Active and Passive Electronic Components / 2004 / Article

Open Access

Volume 27 |Article ID 826353 | https://doi.org/10.1080/1042015031000073805

S. Dib, C. Salame, N. Toufik, A. Khoury, F. Pélanchon, P. Mialhe, "Junction Parameter Extraction for Electronic Device Characterization", Active and Passive Electronic Components, vol. 27, Article ID 826353, 7 pages, 2004. https://doi.org/10.1080/1042015031000073805

Junction Parameter Extraction for Electronic Device Characterization

Received22 Oct 2002
Revised17 Nov 2002

Abstract

A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.

Copyright © 2004 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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