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Active and Passive Electronic Components
Volume 27, Issue 2, Pages 61-67

Junction Parameter Extraction for Electronic Device Characterization

1Laboratoire LPSE, Département de Physique, Université Libanaise-Faculté de Sciences II, Jdeidet BP 90656, Lebanon
2LP2A, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, France

Received 22 October 2002; Revised 17 November 2002

Copyright © 2004 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.