Active and Passive Electronic Components

Active and Passive Electronic Components / 2004 / Article

Open Access

Volume 27 |Article ID 903039 |

Hikmat S. Hilal, Subhi K. Salih, Iyad A. Sa'adeddin, Guy Campet, "Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics", Active and Passive Electronic Components, vol. 27, Article ID 903039, 12 pages, 2004.

Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Received10 Mar 2003
Revised21 Mar 2003


The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

Copyright © 2004 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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