Table of Contents Author Guidelines Submit a Manuscript
Active and Passive Electronic Components
Volume 2010, Article ID 268431, 11 pages
http://dx.doi.org/10.1155/2010/268431
Research Article

Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral

1LaMIPS, Laboratoire commun NXP-CRISMAT, UMR 6508 CNRS ENSICAEN, UCBN, 2, rue de la Girafe BP 5120, F-14079 Caen Cedex 5, France
2NXP Semiconductors 2, Esplanade Anton Philips Campus Effiscience, Colombelles, BP 20 000 14906 Caen Cedex 9, France

Received 16 October 2009; Revised 24 March 2010; Accepted 21 April 2010

Academic Editor: Ashok Goel

Copyright © 2010 Hugues Murray et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hugues Murray, Patrick Martin, and Serge Bardy, “Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral,” Active and Passive Electronic Components, vol. 2010, Article ID 268431, 11 pages, 2010. https://doi.org/10.1155/2010/268431.