Active and Passive Electronic Components

Research Article

Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral

Figure 14

Transfer characteristics 𝐼 𝐷 = 𝑓 ( 𝑉 𝑔 ) . (a) 𝑁 𝐴 = 1 0 1 4 c m − 3 , 𝑉 F B ( flat-band ) = 0 . 9 2  V. (b) 𝑁 𝐴 = 1 0 1 5 c m − 3 , 𝑉 F B = 0 . 8 6  V. Markers (■) and ( ⋄ ) are from [4].
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