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Active and Passive Electronic Components
Volume 2010, Article ID 542572, 6 pages
http://dx.doi.org/10.1155/2010/542572
Research Article

SiGe HBTs Optimization for Wireless Power Amplifier Applications

1STMicroelectronics, Group of Process Integration, 850 rue Jean Monnet, BP 16, 38926 Crolles Cedex, France
2Laboratoire de Microélectronique IMS, CNRS UMR 5218, Université Bordeaux, 33405 Talence, France

Received 4 October 2010; Accepted 20 December 2010

Academic Editor: Marvin Marbell

Copyright © 2010 Pierre-Marie Mans et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve the fT values at high injection levels.