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Active and Passive Electronic Components
Volume 2011, Article ID 821305, 7 pages
http://dx.doi.org/10.1155/2011/821305
Research Article

AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

High Frequency Electronics Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

Received 1 October 2010; Accepted 6 December 2010

Academic Editor: David Moran

Copyright © 2011 S. Taking et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. Taking, D. MacFarlane, and E. Wasige, “AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results,” Active and Passive Electronic Components, vol. 2011, Article ID 821305, 7 pages, 2011. https://doi.org/10.1155/2011/821305.