AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

Figure 1

Optimised TLM processing summary for unprotected and unpassivated AlN/GaN HEMT samples. Processing includes (a) sample cleaning with acetone, isopropanol, and deionised water, (b) deoxidation, (c) Ohmic metallisation, (d) Ohmic annealing, and (e) TLM measurements.