AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Figure 10
against characteristics of fabricated two-finger 3 μm gate length AlN/GaN MOS-HEMT mesa devices with unoptimised etching time (Al etch for 10 secs). The devices had no mesa sidewall passivation and were biased from V to −4 V with a step size of 1 V.
