AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

Figure 12

(a) 𝐼_DS against 𝑉_DS characteristics of fabricated two-finger 100 μm gate width AlN/GaN MOS-HEMT with gate lengths of 0.2 μm and 0.5 μm, (b) the small-signal RF performances. The devices are biased at 𝑉_GS=−2.5 V and 𝑉_DS=10 V.

(a)

(b)