AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

<table>Optimised TLM processing summary for protected and passivated AlN/GaN MOS-HEMT samples. Processing includes (a) sample cleaning with only deionised water and deoxidation, (b) 2 nm Al deposition, (c) etching Al from Ohmic contact regions, (d) thermal oxidation of Al, (e) Ohmic metallisation, (f) Ohmic annealing, and (g) TLM measurements.</table>

Active and Passive Electronic Components

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Figure 2

Figure 2: AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results 