AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

Table 1

Summary of results for the optimised 𝑅_𝐶 and 𝑅_sh values on HEMT and MOS-HEMT samples in the AlN/GaN material system.

Sample	Description	𝑅𝐶, Ω·mm	𝑅sh, Ω/□
A	Unprotected and unpassivated (HEMT)	0.31	480
B2	Protected and passivated (MOS-HEMT)	0.49	159